Silicon-on-insulator dynamic threshold voltage MOSFETs with TiSi2/pSi as reverse Schottky barriers （RSB） are presented. With this RSB scheme,DTMOS can operate beyond 0.7V, thus overcoming the drawback of DTMOS with the gate and body connected. The experimental results demonstrate that the threshold voltage in DT mode with an RSB is reduced by about 200mV at room temperature. SOI MOSFETs in DT mode with an RSB have advantages such as excellent subthreshold slope and high drivability over those under normal mode operation. The breakdown characteristics of SOI MOSFETs in the off-state are compared for the DT mode with RSB, floating body mode, normal mode.
