A novel trench field stop(FS) insulated gate bipolar transistor(IGBT) with a trench shorted anode(TSA)is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm^2. Additionally,there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.
A lateral double-diffused metal–oxide–semiconductor field effect transistor(LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribution is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore,sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions' lengths.
