Although possible non-homogeneous strain effects in semiconductors have been investigated for over a half century and the strain-gradient can be over 1% per micrometer in flexible nanostructures, we still lack an understanding of their influence on energy bands. Here we conduct a systematic cathodoluminescence spectroscopy study of the strain-gradient induced exciton energy shift in elastically curved CdS nanowires at low temperature, and find that the red-shift of the exciton energy in the curved nanowires is proportional to the strain-gradient, an index of lattice distortion. Density functional calculations show the same trend of band gap reduction in curved nanostructures and reveal the underlying mechanism. The significant linear straingradient effect on the band gap of semiconductors should shed new light on ways to tune optical-electronic properties in nanoelectronics.
Symmetric tapered dielectric structures in metal have demonstrated applications such as the nanofocusing of surface plasmon polaritons, as well as the waveguiding of V-channel polaritons. Yet the fabrication of smooth-surfaced tapered structure remains an obstacle to most researchers. We have successfully developed a handy method to fabricate metal-sandwiched tapered nanostructures simply with electron beam lithography. Though these structures are slightly different from conventional symmetric V-shaped structures, systematic simulations show that similar functionality of surface plasmon polariton nanofocusing can still be achieved. When parameters are properly selected, wavelength- selective nanofocusing of surface plasmon polaritons can be obtained.
