A Ga wetting layer was used to modify the surface structure of sapphire (0001) substrate to prepare high-quality ZnO film by radio frequency plasma-assisted molecule beam epitaxy. We found that this Ga layer plays a crucial role in eliminating 30 rotation domains, controlling polarity and decreasing defect density in ZnO epilayers, as demonstrated by in situ reflection high energy electron diffraction, ex situ high resolution X-ray diffraction and high resolution cross-sectional transmission electron microscopy. Zn-polar film of ZnO was determined by convergent beam electron diffraction. A Ga bilayer model is proposed to understand the effects of the Ga wetting layer on high-quality ZnO growth.
ZENG Zhaoquan1,3, WANG Yong2, DU Xiaolong1, MEI Zengxia1, KONG Xianghe3, JIA Jinfeng1, XUE Qikun1 & ZHANG Ze2, 4 1. State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
In this paper two different kinds of dynamic mechanical techniques （inversed torsion pendulum and energy dissipation apparatus） were used to study the dynamic behavior of atactic monodisperse polystyrene above glass transition. The plots of energy dissipation versus temperature were presented for two atactic polystyrene samples. An apparent energy dissipation peak occurred above Tg in each plot measured by the inversed torsion pendulum, and simultaneously the sample was found to flow assuredly at the moment. To exclude the influence of the flow and demonstrate there was a peak indeed above Tg, the energy dissipation apparatus was used, in which the samples were put into a cup. An obvious peak appeared, and it was in agreement with the peak observed by the inversed torsion pendulum. On basis of the results measured by the two kinds of apparatus, a conclusion is drawn that a peak occurrs above Tg, which gives a manifestation for the existence of the liquid-liquid transition.
