In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage （Vmax）. At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.
The semi-quantum two-orbital exchange model is used to investigate the effect of small rare-earth ion substitution on orthorhombic RMnO 3 with A-type antiferromagnetic order,using the Monte Carlo algorithm,exact diagonalization,and zero-temperature optimization approaches.It is revealed that the substitution results in a rich multiferroic phase diagram where the coexisting A-type antiferromagnetic phase and spiral spin phase,pure spiral spin phase,coexisting spiral spin phase,the E-type antiferromagnetic phase,and the pure E-type antiferromagnetic phase emerge in sequence.The multiferroic phase transitions modulate substantially the electric polarization,which is consistent qualitatively with recent experiments.
