In order to discuss the application possibility of SiGe crystal in thermoelectric materials,we investigated the thermoelectric properties of several silicon-germanium alloys with different content,orientation and electric conductive type. As discussed in the experiment result,the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper,the relationship of Seebeck coefficient against content,orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with <111> orientation is smaller than that in <100> at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases,the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition,the specimens of bulk GeSi alloy crystals for experiment were grown by the Czochralski method through varying the pulling rate during the growing process.
A new type of magnetic device was used to replace the conventional electro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanent magnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed at radial 360°. Using the ring permanent magnetic field, thermal convection in melt and centrifugal pumping flows due to crystal rotation could be strongly suppressed so that the fluctuations of temperature and micro-growth rate at solid/liquid interface could be restrained effectively. In the PMCZ condition, the growing environment of SiGe bulk single crystal was similar to the crystal growth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.) had been controlled by diffusion near the solid/liquid interface. Oxygen concentraion became lower and the distribution of composition became more homogeneous along longitudinal direction and across a radial section in the grown SiGe crystal. The mechanism of PMCZ superior to MCZ was also discussed.
ZHANG Weilian, NIU Xinhuan, CHEN Hongjian, ZHANG Jianxin, SUN Junsheng, and ZHANG EnhuaiSemiconductor Material Institute, Hebei University of Technology, Tian jin 300130, China
