Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃.The influence of O2/Ar ratio on the structural,electrical and optical properties of the as-deposited films is investigated by X-ray diffraction,Hall measurement and optical transmission spectroscopy.The lowest resistivity of 4.0×10-4Ω·cm is obtained from the film deposited at the O2/Ar ratio of 1/12.The average optical transmittance of the films is over 90%.
CAO Feng WANG YiDing LIU KuiXue YIN JingZhi LONG BeiHong LI Li ZHANG Yu CHEN XiaMei
The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In1-xGaxAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 1017 cm-3 and 1018 cm-3, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In1-xGaxAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In1-xGaxAs is longer than that of n-type In1-xGaxAs with the same temperature, Ga composition and carriers concentration.
