A dynamic phosphor-silicate glass （PSG） gettering method is proposed in which the processes of the gettering of Ni by PSC and the crystallizing of α-Si into poly-Si by Ni take place simultaneously. The effects of PSC gettering process on the performances of solution-based metal induced crystallized （S-MIC） poly-Si materials and their thin film transistors （TFTs） are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSC during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSC gettering, the TFTs made with PSC gettering has a reduced gate induced leakage current.
This paper introduces a novel digital transceiver for the cordless telephone zero （CT0） standard,which uses a digital modulation and demodulation technique to handle the signal instead of the traditional analog meth-od. In the transmitter,a fractional-N phase locked loop （PLL） is utilized to realize the continuous phase frequency shift key （CPFSK） modulation,and a 2 Ts raised cosine （2RC） shaping technique is used to reduce the occupied bandwidth. In the receiver,a novel digital method is proposed to demodulate the 2RC CPFSK signal. This chip is fabricated using an SMIC 0.35μm mixed signal CMOS process with a die size of 2mm × 2mm. With an external low noise amplifier （LNA）,the sensitivity of the chip is better than -103dBm.
