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国家教育部博士点基金(20123227120021)

作品数:8 被引量:16H指数:2
相关作者:徐东罗雪丹何恺徐红星宋琪更多>>
相关机构:江苏大学电子科技大学更多>>
发文基金:国家教育部博士点基金国家自然科学基金江苏省高校自然科学研究项目更多>>
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8 条 记 录,以下是 1-8
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ZrO_2掺杂ZnO压敏瓷的性能及晶粒生长研究被引量:1
2015年
以球磨法制备Zr O2掺杂Zn O压敏瓷,通过扫描电镜对其显微组织进行了分析,探讨了Zr O2掺杂对Zn O压敏瓷电性能的影响并且研究了晶粒的生长。研究结果表明,随着保温时间的延长,致密度和非线性系数均呈现先增加后减小的趋势;而对Zn O压敏瓷的漏电流和电位梯度的影响则呈现先减小后增加的波浪型变化。Zr O2掺杂Zn O压敏瓷的晶粒尺寸要比基础配方Zn O压敏瓷的晶粒尺寸要小,可能是因为Zr原子半径与Zn原子半径接近,Zr O2固溶在氧化锌晶粒中,抑制了氧化锌晶粒尺寸的增长。由计算可得Zr O2掺杂氧化锌压敏瓷的晶粒生长动力指数(n=5.0)比基础配方氧化锌压敏瓷的晶粒生长动力指数(n=3.9)大。球磨基础配方的Zn O-Bi2O3系压敏瓷的晶粒生长激活能(Q)较大,Q=(231±27)k J/mol。这可能是Zr O2协同尖晶石钉扎在Zn O压敏瓷的晶粒边界,通过颗粒阻滞机理使Zn O压敏瓷的晶粒生长速度降低,从而使Zn O压敏瓷的晶粒生长激活能增大。
何恺吴婕婷于仁红商铫徐传孟牟姝妤徐东
关键词:压敏电阻电性能晶粒生长显微组织
溶胶凝胶法制备NiO掺杂CaCu_3Ti_4O_(12)薄膜(英文)被引量:4
2013年
用溶胶凝胶法制备纯CaCu3Ti4O12(CCTO)薄膜以及NiO掺杂CaCu3-x Nix Ti4O12(CCNTO)薄膜(x=0.10、0.20、0.30),研究了掺杂NiO对CCTO介电性能以及微观结构的影响。通过AFM图片可以看出,掺杂NiO的CCTO薄膜的晶粒尺寸比不掺杂NiO的CCTO薄膜的晶粒尺寸小。当x=0.2时,CCNTO薄膜的漏电流最小,最小值为0.546 mA,同时具有最大阈值电压与最大非线性系数,最大值分别为81 V/mm和1.9。当Ni掺杂量达到一定程度时,CCNTO薄膜的介电常数就会增加,总体来说,随着Ni的掺杂量增加,CCNTO薄膜的介电损耗呈上升趋势。
徐东宋琪张柯徐红星杨永涛于仁红
关键词:钛酸铜钙溶胶-凝胶法电性能显微组织
ZnO-Pr_6O_(11)基压敏电阻的研究进展被引量:2
2013年
从组织结构、压敏机理、制备技术和稀土掺杂作用这4个部分详细综述了各种稀土氧化物在ZnO-Pr6O11基压敏电阻中的掺杂影响并解释了它们的作用机理,阐明稀土氧化物掺杂仍然是改善ZnO-Pr6O11基压敏电阻的电学性能的主要研究方向。制备工艺的完善对改善ZnOPr6O11压敏电阻材料性能也有不可忽视的作用。
何恺戚佳鹏罗雪丹谌勇徐东
关键词:压敏电阻氧化锌氧化镨
Effects of Eu_2O_3 doping on microstructural and electronic properties of ZnO Bi_2O_3-based varistor ceramics prepared by high-energy ball milling被引量:1
2013年
ZnO-Bi2O3-based varistor ceramics doped with EU2O3 in a range from 0 to 0.4% were obtained by high-energy ball milling and fired at 900-1000 ℃ for 2 h. XRD and SEM were applied to determine the phases and microstructure of the varistor ceramics. A DC parameter instrument was applied to investigate the electronic properties and V-I characteristics. The XRD analysis of Eu2O3-doped ZnO-Bi2O3-based varistor ceramics shows that the ZnO, Eu-containing Bi-rich, Zn7Sb2O12-type spinel and Zn2Bi3Sb3O14-type which is the pyrochlore phase are present. With increasing Eu2O3 content, the average size of ZnO grain firstly decreases and then increases. The grain boundary defect model was particularly used to explain the excellent nonlinearity of ZnO-Bi2O3-based varistor ceramics with the addition of0.1% Eu2O3 and sintered at 950 ℃.
董玉娟崔凤单焦雷徐红星唐冬梅吴婕婷于仁红徐东
关键词:CERAMICSVARISTORS
Highly nonlinear property and threshold voltage of Sc_2O_3 doped ZnO-Bi_2O_3-based varistor ceramics被引量:5
2013年
A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry (XRD) and scanning electron microscopy (SEM) were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3 -based ceramics sintered at 1000 oC, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 μA.
徐东吴婕婷焦雷徐红星张培枚于仁红程晓农
关键词:CERAMICSVARISTORS
Al_2O_3掺杂ZnO线性电阻的性能及其显微组织被引量:2
2014年
通过高能球磨法,分别在1 250,1 300,1 350℃下制备了掺杂量为3.5%,4.0%,4.5%,5.0%的Al2O3掺ZnO线性电阻,通过扫描电镜和X射线衍射对其显微组织和相成分进行了分析,探讨了不同Al2O3掺杂量和不同烧结温度对ZnO线性电阻的线性性能和介电性能的影响.结果表明:掺杂A12O3的ZnO线性电阻主晶相为ZnO,并伴随有少量锌尖晶石相生成.在烧结温度为1 350℃,Al2O3掺杂摩尔分数为3.5%时,线性电阻性能最优,其非线性系数为1.00.另外,随A12O3掺杂量增大,ZnO线性电阻的介电常数变化不大,而烧结温度对陶瓷的介电常数有较为明显的影响.
董玉娟张珂叶效易萌罗雪丹徐东
关键词:线性电阻氧化锌氧化铝电性能显微组织
Microstructure and electrical properties of La_2 O_3-doped ZnO-based varistor thin films by sol-gel process被引量:1
2014年
Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
徐东姜斌崔凤单杨永涛徐红星宋琪于仁红
关键词:VARISTORFILMMICROSTRUCTURE
Microstructure and electrical properties of Sc_2O_3-doped CaCu_3Ti_4O_(12) ceramics
2015年
CaCu3Ti4O12 ceramics doped with different contents of Sc203 (mol%, x = 0, 0.05, 0.10, 0.15, and 0.20) were prepared by the traditional solid-state reaction method. Scanning electron microscope (SEM) and X-ray diffraction (XRD) were used in the microstructural studies of the specimen, and the electrical properties were inves- tigated. XRD results show that the Sc has no influence on the phase composition. The results from the dielectric measurements show that further increase of Sc doping could decrease the dielectric loss slightly. A high dielectric constant and low dielectric loss can be achieved when the doping concentration is 0.10 mol%.
Dong XuKe ZhangLei JiaoKai HeHong-Xing XuGuo-Ping ZhaoRen-Hong Yu
关键词:VARISTOR
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