The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.
Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, structures and potential applications are reviewed. As nanodevices work in nanometer dimensions, they consume much less power and function much faster than conventional microelectronic devices. Nanoelectronic devices can operate in different principles so that they can be further grouped into field emission devices,molecular devices, quantum devices, etc. Nanodevices can function as sensors, diodes, transistors, photovoltaic and light emitting devices, etc. Recent advances in both theoretical simulation and fabrication technologies expedite the development process from device design to prototype demonstration. Practical applications with a great market value from nanoelectronic devices are expected in near future.
Yafei ZhangLi Franklin DuanYaozhong ZhangJian WangHuijuan GengQing Zhang
Carbon dots(CDs), as a new member of carbon nanomaterial family, have aroused great interest since their discovery in 2004. Because of their outstanding water solubility, high sensitivity and selectivity to target analytes, low toxicity, favorable biocompatibility, and excellent photostability, researchers from diverse disciplines have come together to further develop the fundamental properties of CDs. Many methods for the production of CDs have been reported, therein, hydrothermal and solvothermal technology needs simple equipments, and microwave synthesis needs less reaction time, hence these methods become current common synthesis methods, in which many precursors have been applied to produce CDs. Due to their excellent fluorescence, CDs have made impressive strides in sensitivity and selectivity to a diverse array of salt ions,organic/biological molecules and target gases. The development of CDs as nanoprobes is still in its infancy, but continued progress may lead to their integration into environmental and biological applications. Hydrothermal,solvothermal, and microwave synthesis of fluorescent carbon dots and their detection applications as nanoprobes in salt ions, organic/biological molecules, and target gases will be reviewed.
A vertical carbon nanotube field-effect transistor(CNTFET) based on silicon(Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube(SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage(Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.
The effect of hydrogen plasma treatment （HPT） during the initial stage ofmicrocrystalline silicon （μc- Si） growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si-H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density.
