Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced.
LIAN WenTaiLONG ShiBingLU HangBingLIU QiLI YingTaoZHANG SenWANG YanHUO ZongLiangDAI YueHuaCHEN JunNingLIU Ming
In this paper, improvements of resistive random access memory (RRAM) using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points: eliminating the electroforming process, reducing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high resistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effective way of improving the electrical performance of RRAM.
WANG YanLIU OiLU HangBingLONG ShiBingWANG WeiLI YingTaoZHANG SenLIAN WenTaiYANG JianHongLIU Ming
