A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50 nm line width is achievable with the structure shown in this paper by using 365 nm wavelength light, and the light can be transferred to a far distance in the photoresist.
This paper demonstrates a new process of the photolithography technology, used to fabricate simply fine patterns, by employiag surface plasmon character. The sub-wavelength periodic silica structures with uniform silver film are used as the exposure mask. According to the traditional semiconductor process, the grating structures are fabricated at exposing wavelength of 436 nm. At the same time, it provides additional and quantitative support of this technique based on the finite-difference time-domain method. The results of the research show that surface plasmon characteristics of metals can be used to increase the optical field energy distribution differences through the silica structures with silver film, which directly impact on the exposure of following photosensitive layer in different regions.
