This paper presents the design and analysis of a high speed broadband divide-by-2 frequency divider. The proposed divider is a dynamic source-coupled logic(DSCL) structure formed with two dynamic-loading master-slave D latches,which enables high frequency operation and low power consumption.This divider exhibits a wide locking range from 7-27 GHz and the minimum power consumption is only 1.22 mW from a 1.2 V supply.The input sensitivity is as low as -25.4 dBm across the operating frequency range.This chip occupies 685×430μm^2 area with two on-chip spiral inductors in 90 nm CMOS process.
A Ka-band sub-harmonically pumped resistive mixer(SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor(CMOS) technology.An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance(balun) with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation(LO) signal from single to differential mode.The results showed that the SHPRM achieves the conversion gain of-15--12.5 dB at fixed fIF=0.5 GHz with 8 dBm LO input power for the radio frequency(RF) bandwidth of 28-35 GHz.The in-band LO-intermediate freqency(IF),RF-IF,and LO-RF isolations are better than 31,34,and 36 dB,respectively.Besides,the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB,respectively.The measured input referred P1dB and 3rd-order inter-modulation intercept point(IIP3) are 0.5 and 10.5 dBm,respectively.The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm2 including pads.
Ge-liang YANGZhi-gong WANGZhi-qun LIQin LIFa-en LIUZhu LI
A 37 GHz wide-band programmable divide-by-N frequency divider(FD) composed of a divide-by-2 divider(acting as the first stage) and a divider with a division ratio range of 273–330(acting as the second stage) has been designed and fabricated using standard 90 nm CMOS technology. The second stage divider consists of a high-speed divide-by-8/9 dual-modulus prescaler, a pulse counter, and a swallow counter. Both the first stage divider(with high speed) and the divide-by-8/9 prescaler employ dynamic current-mode logic(DCML) structure to improve the operating performance. The first stage divider can work from 2 to 40 GHz and the whole divider covers a wide frequency range from 25 to 37 GHz. The input sensitivity is as low as-20 d Bm at 32 GHz and the phase noise at 37 GHz is less than-130 d Bc/Hz at an offset of 1 MHz. The whole chip dissipates 17.88 m W at a supply voltage of 1.2 V and occupies an area of only 730 μm×475 μm.
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET(IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27–32.5 GHz, exhibiting a frequency tuning range(FTR) of 18.4%and a phase noise of –101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of –185dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 m A DC current.
A low-jitter RF phase locked loop(PLL) frequency synthesizer with high-speed mixed-signal down-scaling circuits is proposed.Several techniques are proposed to reduce the design complexity and improve the performance of the mixed-signal down-scaling circuit in the PLL.An improved D-latch is proposed to increase the speed and the driving capability of the DMP in the down-scaling circuit.Through integrating the D-latch with 'OR' logic for dual-modulus operation,the delays associated with both the 'OR' and D-flip-flop(DFF) operations are reduced,and the complexity of the circuit is also decreased.The programmable frequency divider of the down-scaling circuit is realized in a new method based on deep submicron CMOS technology standard cells and a more accurate wire-load model.The charge pump in the PLL is also realized with a novel architecture to improve the current matching characteristic so as to reduce the jitter of the system.The proposed RF PLL frequency synthesizer is realized with a TSMC 0.18-μm CMOS process. The measured phase noise of the PLL frequency synthesizer output at 100 kHz offset from the center frequency is only -101.52 dBc/Hz.The circuit exhibits a low RMS jitter of 3.3 ps.The power consumption of the PLL frequency synthesizer is also as low as 36 mW at a 1.8 V power supply.
Two essential blocks for the PLLs based on CP, a phase-frequency detector(PFD) and an improved current steering charge-pump(CP), are developed. The mechanisms for widening the phase error detection range and eliminating the dead zone are analyzed and applied in our design to optimize the proposed PFD. To obtain excellent current matching and minimum current variation over a wide output voltage range, an improved structure for the proposed CP is developed by fully utilizing many additional sub-circuits. Implemented in a standard 90-nm CMOS process, the proposed PFD achieves a phase error detection range from –354° to 354° and the improved CP demonstrates a current mismatch of less than 1.1% and a pump-current variation of 4% across the output voltage,swinging from 0.2 to 1.1 V, and the power consumption is 1.3 m W under a 1.2-V supply.
A dual-band, wide tuning range voltage-controlled oscillator that uses transformer-based fourth-order(LC) resonator with a compact common-centric layout is presented. Compared with the traditional wide band(VCO), it can double frequency tuning range without degrading phase noise performance. The relationship between the coupling coefficient of the transformer, selection of frequency bands, and the quality factor at each band is investigated. The transformer used in the resonator is a circular asymmetric concentric topology. Compared with conventional octagon spirals, the proposed circular asymmetric concentric transformer results in a higher qualityfactor, and hence a lower oscillator phase noise. The VCO is designed and fabricated in a 0.18- m CMOS technology and has 75% wide tuning range of 3.16–7.01 GHz. Depending on the oscillation frequency, the VCO current consumption is adjusted from 4.9 to 6.3 m A. The measured phase noises at 1 MHz offset from carrier frequencies of 3.1, 4.5, 5.1, and 6.6 GHz are –122.5, –113.3, –110.1, and –116.8 d Bc/Hz, respectively. The chip area, including the pads, is 1.20.62 mm2 and the supply voltage is 1.8 V.
This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm^2,while the active area is only 0.022 mm^2.
