200-nm-thick Au interconnects on a quartz substrate were tested in-situ inside a dual-beam microscope by applying direct current, alternating current and alternating current with a small direct current component. The failure behavior of the Au interconnects under three kinds of electric currents were characterized in-situ by scanning electron microscopy. It is found that the formation of voids and subsequent growth perpendicular to the interconnect direction is the fatal failure mode for all the Au interconnects under three kinds of electric currents. The failure mechanism of the ultrathin metal lines induced by the electric currents was analyzed.
The electrical resistivity of Cu/Ta multilayers deposited by radio-frequency magnetron sputtering on a polyimide substrate was investigated as a function of monolayer thickness. It is found that the resistivity of the multilayer increases with decreasing monolayer thickness from 500 nm to 10 nm. Two significant effects of layer interface scattering and grain boundary scattering were identified to dominate electronic transportation behavior in the Cu/Ta multilayers at different length scales. The electrical resistivity of the multilayer with monolayer thickness ranging from nanometer to submicron scales can be well described by a newly-proposed Fuchs-Sandheimair （F-S） and Mayadas-Shatzkes （M-S） combined model.
