Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.
Bi3.15Nd0.85Ti3O12 （BNT） powder and thin film were prepared by metal organic decomposition （MOD） method. The heat flow curve of BNT powder was measured with a modulated temperature differential scanning calorimeter, and thermal physical parameters such as thermal conductivity coefficient and thermal diffusion coefficient were obtained from the heat flow curve. The phase identification, ferroelectric, and piezoelectric properties of BNT thin film annealed at 700℃ were investigated with X-ray diffractometer, ferroelectric analyzer, and scanning probe microscope. The results show that the thin films consisting of a single phase of bismuth-layered perovskite are polycrystalline, without a preferred orientation. Remnant polarization 2Pr is 63.2 μC/cm2 under 530 kV/cm applied field, and the effective piezoelectric coefficient d33 is 30 pm/V.
