The paper reports the setting up of a model of fluid dynamic for GaN HVPE system and the simulation. It is found that when the direction of gravity is opposite to the direction of GaCl flow inlet,there exits a distance at which the uniformity of the deposition is optimal. Here the good uniformity of the deposition is obtained when the distance between the substrate and GaCl inlet is 5 cm. The parameters of gas flow used in growing GaN are also optimized. In addition, the influence of gravity and buoyancy on the deposition of GaN is discussed, too. It is found that the angle between the direction of gravity and the direction of GaCl flow inlet has a major effect on the deposition rate and the uniformity of the growth. Compared with the situation when the direction of gravity is the same with the direction of GaCl flow inlet, although the deposition rate of GaN has decreased obviously, the uniformity of the deposition has improved largely when the direction of gravity is opposite to the direction of GaCl flow inlet.
ZHAO ChuanZhen, XIU XiangQian , ZHANG Rong , XIE ZiLi, LIU Bin, LIU ZhanHui, YAN HuaiYue & ZHENG YouDou Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
