One-dimensional(1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga_2O_3 nanoribbons, Ga_2O_3 nanorods or Ga nanowires filled into carbon nanotubes(CNTs). The 1D GaN nanomaterials transformed from Ga_2O_3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e.(0002)2H or(111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga_2O_3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies:(i) single crystalline Ga N nanocolumns coated by CNTs, and(ii) pure single crystalline Ga N nanowires. The cross-sectional shape of Ga N nanowires were analyzed through the transmission electron microscopy(TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.
