This paper reported a silicon micromachined gyroscope which is driven by the rotating carrier's angular velocity,the silicon was manufactured by anisotropy etching.The design,fabrication and packing of the sensing element were introduced in the paper.The imitation experimentation and performance test have certificated that the principle of the gyroscope is correct and the gyroscope can be used to sense yawing or pitching angular velocity of the rotating carrier,and the angular velocity of the rotating carrier itself.
The films of Ge and Si were grown on the substrate Si (100) by magnetron sputtering at 2.5 Pa Ar pressure.The growth temperature of films was 100℃,250℃,400℃and 550℃.The structure and composition were analysised by Raman scattering.The poly-crystal peak and crystal peak of Ge were observed in these films.The results indicate that the single crystal film of Ge was prepared at the substrate temperature of 400℃.The peak of acoustic phonons of Ge was 98 cm^(-1) and that of Si was 170 cm^(-1).
