Organic solar cells(OSCs)have drawn substantial attention in recent two decades due to their features of solution processability,low cost,and light weight[1].The active layer of OSCs is usually composed of an electron donor(D)and an electron acceptor(A).The D/A system can form interpenetrated nanoscale network,which allows efficient exciton dissociation and hence charge carrier generation.However,the efficiency of such binary OSCs is gen-
An ideal organic thin film photodetectors(OTFPs) should adopt a hierarchical, multilayer p-type/blend-type/n-type(PIN) structure,with each layer having a specific purpose which could greatly improve the exciton dissociation while guarantee efficient charge transport. However, for the traditional layer-by-layer solution fabrication procedure, the solvent used can induce organic material mixing and molecular disordering between each layer. Hence, such architecture for OTFPs can now only be formed via thermal evaporation. In this paper, a contact-film-transfer method is demonstrated to all-solution processing organic PIN OTFPs on flexible substrates. The fabricated PIN OTFPs exhibit high photoresponse and high stability under continuous mechanical bending. Hence,the method we described here should represent an important step in the development of OTFPs in the future.
In this study,indium oxide(In_2O_3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300?C),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In_2O_3 thin-films and the electrical characteristics of In_2O_3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In_2O_3-TFT annealed at 300?C exhibits excellent device performance,and one annealed at 200?C exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300?C exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200?C is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In_2O_3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.
