Etectroluminescence peaking at 1.3 μm is observed from high concentration boron-diffused silicon p^＋-n junctions. This emission is efficient at low temperature with a quantum efficiency 40 times higher than that of the band-to-band emission around 1.1 μm, but disappears at room temperature. The 1.3-μm band possibly originates from the dislocation networks lying near the junction region, which are introduced by high concentration boron diffusion.
Optimizing efficiency of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO_2/N＇-bis-（1-naphthl）-diphenyl-1,1＇-biphenyl-4,4＇-diamine（NPB）/tris（8-hydroxyquinoline） aluminum（Alq_3）/4,7-diphenyl^（-1）,10-phenanthroline（BPhen）：Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering（MS）Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent efficiency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power efficiency of the NPPS anode OLED reach maximum values of 6.7 cd ·A^（-1）and 4.64 lm ·W^（-1）, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide（ITO） anode counterpart, and then, the physical reasons were discussed.
