We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory(NVM) applications.By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme,both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor,the 'erased states' can be set to below 0 V,so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified.Good memory cell performance has also been achieved,including a fast program/erase(P/E) speed(a 1.15 V memory window under 10μs program pulse),an excellent data retention(only 20%charge loss for 10 years).The data shows that the device has strong potential for future embedded NVM applications.
