The studies on structure and electrical characteristic of Nb-doped SrTiO3 (SNTO) substrates by XRD, Hall measurements, R-T and SEM, show that the SNTO substrates with the same Nb-doping concentration have different electrical properties be- cause of the nonuniformity of Nb-doping. The uni- formly doped high-quality substrates are extremely important for fabricating multilayer structure and de- vices. In addition, the experimental results also pro- vide us with SEM method to judge the uniformity of conducting material.
HUANG Yanhong LUE Huibin GUO Haizhong LIU Lifeng HE Meng CHEN Zhenghao ZHOU Yueliang ZHAO Kun JIN Kuijuan YANG Guozen
The SrTiO3 (001) substrates treated by chemical etching in NH4F-buffered HF solution and annealing in oxygen ambient have been studied by an atomic force microscopy (AFM). The SrTiO3 substrates with TiO2-termineted and atomically smooth surfaces and single unit cell steps have been obtained. The surface morphologies of SrTiO3 substrates strongly depend on the treated conditions and the quality of the substrates.
WANG Xu1, FEI Yiyan1, LU Huibin1, JIN Kui-juan1, ZHU Xiangdong1,3, CHEN Zhenghao1, ZHOU Yueliang1 & YANG Guozhen1 1. Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China
We report here studies on the influence of oxygen pressure on the electroresis-tance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epi-taxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter,higher resistance,and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication.
OUYANG SiHua1,2,WANG ChunChang2,LIU GuoZhen2,HE Meng2, JIN KuiJuan2,DANG ZhiMin1 & L HuiBin21 College of Materials Science and Engineering,Beijing University of Chemical Technology,Beijing 100029,China
Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.
High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction θ -2θ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΩ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials.
LIU GuoZhen1, HE Meng1, JIN KuiJuan1, YANG GuoZhen1, Lü HuiBin1, ZHAO Kun2, ZHENG ShiJian3 & MA XiuLiang3 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
