To validate the correctness of the Hartman-Perdok Theory(HPT),which indicates that the {111} planes have the lowest surface energy in spinel ferrites,the {111} plane orientated ZnFe_2O_4 thin films on Si(100),Si(111),and SiO 2(500 nm)Si(111) substrates were obtained through a radio frequency(RF) magnetron sputtering method with a low sputtering power of 80 W.All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFe 2 O 4 thin films,and it matches well with HPT.The ZnFe_2O_4 thin films exhibit ferromagnetism with a magnetization of 84.25 kJmol at room temperature,which is different from the bulk counterpart(antiferromagnetic as usual).The ZnFe_2O_4 thin films can be used as high-quality oriented inducing buffer layers for other spinel(Ni,Mn)Zn ferrite thin films and may have high potential in magnetic thin films-based devices.
Jin-long LiZhong YuKe SunXiao-na JiangZhong-wen Lan
