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国家重点基础研究发展计划(2011CB922000)

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发文基金:国家自然科学基金国家重点基础研究发展计划国家高技术研究发展计划更多>>
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Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure被引量:2
2012年
GaInAs/AlGaAs comprehensive-strained three-quantum-well lasers with asymmetric waveguide are designed and optimized.With this design,the optical field in the transverse direction is extended,and a semiconductor laser with large spot is obtained.For a 300-μm cavity length and 100-μm aperture device under continuous wave(CW) operation,the measured vertical and horizontal far-field divergence angles are 12.2? and 3.0?,respectively.The slope efficiency is 0.44 W/A and the lasing wavelength is 917 nm.The equivalent transverse spot size is 3 μm for the fundamental transverse mode,which is a sufficiently large value for the purpose of coupling and manipulation of light.
张建心刘鑫陈徽刘安金周文君郑婉华
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