Optimizing ef?ciencies of organic light-emitting diodes(OLEDs) with a structure of Al/glass/nanometerthick polycrystalline p-Si(NPPS) anode/SiO_2/N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine(NPB)/tris(8-hydroxyquinoline) aluminum(Alq_3)/4,7-diphenyl^(-1),10-phenanthroline(BPhen):Cs_2CO_3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering(MS)Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent ef?ciency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power ef?ciencies of the NPPS anode OLED reach maximum values of 6.7 cd ·A^(-1)and 4.64 lm ·W^(-1), respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide(ITO) anode counterpart, and then, the physical reasons were discussed.
